fmsk620c-dg fmsk630c-dg FMSK640C-DG 2 0 3 0 4 0 1 4 2 1 2 8 2 0 3 0 4 0 - 5 5 t o + 1 2 5 s y m b o l s v r r m ( v ) v r m s v r ( v ) ( v ) * 1 * 2 * 3 * 1 r e p e t i t i v e p e a k r e v e r s e v o l t a g e * 2 r m s v o l t a g e * 3 c o n t i n u o u s r e v e r s e v o l t a g e * 4 m a x i m u m f o r w a r d v o l t a g e @ i f = 3 . 0 a v f ( v ) * 4 0 . 5 5 fmsk6100c-dg fmsk6150c-dg fmsk6200c-dg 1 0 0 1 5 0 2 0 0 7 0 1 0 5 1 4 0 1 0 0 1 5 0 2 0 0 fmsk650c-dg fmsk660c-dg fmsk680c-dg 5 0 6 0 8 0 3 5 4 2 5 6 5 0 6 0 8 0 0 . 7 5 0 . 8 5 1 . 0 0 p a r a m e t e r c o n d i t i o n s f o r w a r d r e c t i f i e d c u r r e n t f o r w a r d s u r g e c u r r e n t r e v e r s e c u r r e n t t h e r m a l r e s i s t a n c e s t o r a g e t e m p e r a t u r e s e e f i g . 1 8 . 3 m s s i n g l e h a l f s i n e - w a v e s u p e r i m p o s e d o n r a t e l o a d ( j e d e c m e t h o d e ) s y m b o l m i n . t y p . m a x . u n i t i o i f s m i r t s t g a a m a o c / w o c 6 . 0 7 5 0 . 5 + 1 7 5 - 6 5 5 . 0 o v = v t = 2 5 c r r r m j o v = v t = 1 0 0 c r r r m j j u n c t i o n t o c a s e 2 0 r j c o ( c ) o p e r a t i n g t e m p e r a t u r e t , j - 5 5 t o + 1 5 0 fmsk620c-dg thru fmsk6200c-dg chip schottky barrier rectifier 6.0a surface mount schottky barrier rectifiers - 20v-100v 0 . 2 1 7 ( 5 . 5 0 ) 0 . 2 0 1 ( 5 . 1 0 ) 0 . 2 6 4 ( 6 . 7 0 ) 0 . 2 4 8 ( 6 . 3 0 ) 0 . 1 1 4 ( 2 . 9 0 ) 0 . 0 9 8 ( 2 . 5 0 ) 0 . 2 4 4 ( 6 . 2 0 ) 0 . 2 2 8 ( 5 . 8 0 ) 0 . 0 4 8 ( 1 . 2 0 ) 0 . 0 3 1 ( 0 . 8 0 ) 0 . 1 8 5 ( 4 . 7 0 ) 0 . 1 6 9 ( 4 . 3 0 ) 0 . 0 3 9 ( 1 . 0 0 ) 0 . 0 3 1 ( 0 . 8 0 ) 0 . 0 2 4 ( 0 . 6 0 ) 0 . 0 1 6 ( 0 . 4 0 ) 0 . 0 2 4 ( 0 . 6 0 ) 0 . 0 1 6 ( 0 . 4 0 ) 0 . 0 9 8 ( 2 . 5 0 ) 0 . 0 8 3 ( 2 . 1 0 ) 0 . 0 3 2 ( 0 . 8 0 ) 0 . 0 1 6 ( 0 . 4 0 ) dpak package outline dimensions in inches and (millimeters) features batch process design, excellent power dissipation offers ? better reverse leakage current and thermal resistance. low profile surface mounted application in order to optimize board space. ? ? low power loss, high efficiency. ? high current capability, low forward voltage drop. ? high surge capability. ? guardring for overvoltage protection. ? ultra high-speed switching. ? silicon epitaxial planar chip, metal silicon junction. ? lead-free parts meet environmental standards of mil-std-19500/228 ? suffix "-h" indicates halogen free parts, ex. fmsk620c-dg-h. mechanical data ? epoxy: ul94-v0 rated frame retardant ? case: molded plastic, to-252 / dpak ? terminals: solder plated, solderable per mil-std-750, method 2026 ? polarity: lndicated by cathode band ? mounting position: any ? weight: approximated 0.34 gram page 1/2 @ 2010 copyright by american first semiconductor maximum ratings (at t =25 a o c unless otherwise noted) fmsk645c-dg 4 5 3 1.5 4 0
0.1 1.0 .01 10 inst ant aneous for w ard current ,(a) for w ard vol t age,(v) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 fig.2-typical for w ard characteristics 80~100v 20~40v 150~200v 45~60v pulse width 300us 1% duty cycle o t =25 c j 6.0 fig.3-maximum non-repetitive for w ard surge current number of cycles a t 60hz peak for w ard surge current ,(a) 1 10 100 0 15 30 45 60 75 90 t =25 c j 8.3ms single half sine w ave jedec method fig.1-typical for w ard current dera ting cur ve a verage for w ard current ,(a) 1 2 3 4 5 6 0 0 20 40 60 80 100 120 140 160 180 200 case tempera ture,( c) fmsk620c-dg~FMSK640C-DG fmsk645c-dg~fmsk6200c-dg .01 0.1 1.0 10 fig.4 - typical reverse characteristics reverse leakage current , (ma) 0 20 40 60 80 100 120 140 .001 t =75 c j t =25 c j percent of ra ted peak reverse vol t age,(%) fmsk620c-dg thru fmsk6200c-dg rating and characteristic curves page 2/2 www.first-semi.com
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